ADVANCED TESTING & INSTRUMENTATION

Neuromorphic
Chip Analyzer

32-Channel Platform for Neuromorphic Crossbar Array & Energy per Device (ED) Characterization

Characterize neuromorphic devices at fast speeds, characterize multiple devices, apply treatment waveforms to crossbar arrays, measure dynamic resistance and its variance – all from one integrated platform with industry-standard software.

128 HIGH PRECISION SMU
128 HIGH PRECISION SMU
Run
Error
Power
32

Configurable
Channels

48Vpp

Maximum Output
Voltage

16-bit

DAC Resolution

10MHz

Maximum Input
Frequency

50mA

Maximum Current Output
per channel

Integrated ±10 V Test Voltage
Built-in Current Measurement
PD Temperature Control
USB-C & PCIe
MEMRISYS 2026

See it at MEMRISYS 2026

10–12 March, 2026   |   Dresden, Germany

Book a demonstration and explore the system live
Book a Demo at MEMRISYS

From Single Devices to Crossbar Arrays

One platform for a wide range of research and characterization tasks.

Individual Device Characterization

IV sweeps, pulse/relaxation, endurance tests, and leakage analysis with extreme timing.

Parallel Multi-Device Testing

Configure and control multiple devices in parallel for faster testing and maximum data throughput.

Crossbar Array Characterization

Reads, program and disturb measurements at arbitrary word-lines, periphery response crossbars.

Simultaneous Multi-Device I–V Characterization

73% variation
in current

Built for Crossbar Experiments

Measured (mA)
0.00
4.00
OUTPUT

High precision
voltage or current

CURRENT INPUT

Low noise measurement
input

H–Z

High-impedance
voltage read

Each cell (or 32 channels) can be swept (parallel or sequential), pulsed, or read at sub-µs timing precision at up to 10 MHz.

Flexible Signal Generation

DC
Pulse
Ramp
Arbitrary
Custom
  • IV sweeps, single or bi-polar pulse testing
  • Step or ramp signal application
  • µs-level delay & voltage window
  • Automated DC & Pulse read operations

Automated Experiments

  • Build test routines using visual instrument
  • Automate tests across multiple test setups
  • Parallel device programming and readout
  • Generate comprehensive reports
  • Custom device resistor binning
  • Wafer device read and test mapping
  • Seamless integration with probe systems

Automated Device Characterization

I–V Characteristics
Switching
Dynamics
Endurance
Testing
SET/RESET
Analysis
Resistance
Pulse/Relaxation
Tests
Excitation/Sense
Curves
Read Disturb
Tests
Re-Disturb
Recovery

Applications

  • Non-volatile & RRAM
  • Neuromorphic Devices
  • Oxide/Resistive Devices
  • In-Memory Computing
  • Sensor & Multi-Terminal Arrays

Open & Customizable Platform

  • Open communication protocol and software architecture
  • Fully configurable hardware and standard test
  • Seamless integration with probe stations and manufacturing
  • Easy integration with laboratory test setups and automation workflows

Technical Specifications

Output Voltage (DC/Pulse) 32 Waveforms DC, Pulse, Ramp, Triangle, User Sequence
Channel Isolation 150 Vpp Open / Ground input · 84 V* Memory Modes DC and Pulse
Max Output Current 100 mA Sensing Voltage or Current (Sense Channel Mode)
Output Voltage Resolution 16-bit Input Voltage Range ±10 V (for ±12 Vpp)
Minimum Pulse Width 100 ns pulse generation mode* Output Impedance 100 Ω (typical, ±10%)
Minimum Pulse-to-Pulse Spacing 100 ns PCIe Interface USB-C
Maximum Output Frequency 10 MHz (per channel)* Software nV Software

* Pulse specification limits are configurable.

Bring Your Device.
We’ll Help You Characterize It.

Talk to an expert and see how nVolts can meet your measurement requirements. Request a demo or consultation and explore the Neuromorphic Chip Analyzer.

sales@nvolts.com +82-31-646-0912 www.nvolts.com